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High-efficiency InGaN/GaN quantum well structures on large area silicon substrates : Indium Nitride and Related Alloys

Identifieur interne : 001A87 ( Main/Repository ); précédent : 001A86; suivant : 001A88

High-efficiency InGaN/GaN quantum well structures on large area silicon substrates : Indium Nitride and Related Alloys

Auteurs : RBID : Pascal:12-0043498

Descripteurs français

Pascal (Inist)
- Rendement quantique, Couche interfaciale, Microscopie électronique transmission, Dislocation filetée, Densité dislocation, Spectre perte énergie électron, Microscopie fond sombre, Méthode MOVPE, Structure atomique, Gallium Indium Nitrure Mixte, Nitrure de gallium, Puits quantique, InGaN, GaN, Substrat silicium, Gauchissement de bande.

English descriptors

KwdEn :
- Atomic structure, Band bowing, Dark field microscopy, Dislocation density, Electron energy loss spectra, Gallium Indium Nitrides Mixed, Gallium nitride, Interfacial layer, MOVPE method, Quantum wells, Quantum yield, Threading dislocation, Transmission electron microscopy.

Abstract

The growth techniques which have enabled the realization of InGaN-based multi-quantum-well (MQW) structures with high internal quantum efficiencies (IQE) on 150 mm (6-in.) silicon substrates are reviewed. InGaN/GaN MQWs are deposited onto GaN templates on large-area (111) silicon substrates, using AlGaN strain-mediating interlayers to inhibit thermal-induced cracking and wafer-bowing, and using a SiNx interlayer to reduce threading dislocation densities in the active region of the MQW structure. MQWs with high IQE approaching 60% have been demonstrated. Atomic resolution electron microscopy and EELS analysis have been used to study the nature of the important interface between the Si( 111) substrate and the AlN nucleation layer. We demonstrate an amorphous SiN_x interlayer at the interface about 2 nm wide, which does not, however, prevent good epitaxy of the AlN on the Si(111) substrate.

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Pascal:12-0043498

Le document en format XML

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<term>Dark field microscopy</term>
<term>Dislocation density</term>
<term>Electron energy loss spectra</term>
<term>Gallium Indium Nitrides Mixed</term>
<term>Gallium nitride</term>
<term>Interfacial layer</term>
<term>MOVPE method</term>
<term>Quantum wells</term>
<term>Quantum yield</term>
<term>Threading dislocation</term>
<term>Transmission electron microscopy</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Rendement quantique</term>
<term>Couche interfaciale</term>
<term>Microscopie électronique transmission</term>
<term>Dislocation filetée</term>
<term>Densité dislocation</term>
<term>Spectre perte énergie électron</term>
<term>Microscopie fond sombre</term>
<term>Méthode MOVPE</term>
<term>Structure atomique</term>
<term>Gallium Indium Nitrure Mixte</term>
<term>Nitrure de gallium</term>
<term>Puits quantique</term>
<term>InGaN</term>
<term>GaN</term>
<term>Substrat silicium</term>
<term>Gauchissement de bande</term>
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<front><div type="abstract" xml:lang="en">The growth techniques which have enabled the realization of InGaN-based multi-quantum-well (MQW) structures with high internal quantum efficiencies (IQE) on 150 mm (6-in.) silicon substrates are reviewed. InGaN/GaN MQWs are deposited onto GaN templates on large-area (111) silicon substrates, using AlGaN strain-mediating interlayers to inhibit thermal-induced cracking and wafer-bowing, and using a SiNx interlayer to reduce threading dislocation densities in the active region of the MQW structure. MQWs with high IQE approaching 60% have been demonstrated. Atomic resolution electron microscopy and EELS analysis have been used to study the nature of the important interface between the Si( 111) substrate and the AlN nucleation layer. We demonstrate an amorphous SiN<sub>x</sub>
 interlayer at the interface about 2 nm wide, which does not, however, prevent good epitaxy of the AlN on the Si(111) substrate.</div>
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<fC01 i1="01" l="ENG"><s0>The growth techniques which have enabled the realization of InGaN-based multi-quantum-well (MQW) structures with high internal quantum efficiencies (IQE) on 150 mm (6-in.) silicon substrates are reviewed. InGaN/GaN MQWs are deposited onto GaN templates on large-area (111) silicon substrates, using AlGaN strain-mediating interlayers to inhibit thermal-induced cracking and wafer-bowing, and using a SiNx interlayer to reduce threading dislocation densities in the active region of the MQW structure. MQWs with high IQE approaching 60% have been demonstrated. Atomic resolution electron microscopy and EELS analysis have been used to study the nature of the important interface between the Si( 111) substrate and the AlN nucleation layer. We demonstrate an amorphous SiN<sub>x</sub>
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<s4>CD</s4>
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<s4>CD</s4>
<s5>97</s5>
</fC03>
<fN21><s1>023</s1>
</fN21>
</pA>
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High-efficiency InGaN/GaN quantum well structures on large area silicon substrates : Indium Nitride and Related Alloys

High-efficiency InGaN/GaN quantum well structures on large area silicon substrates : Indium Nitride and Related Alloys

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